{"id":833,"date":"2024-10-29T09:17:35","date_gmt":"2024-10-29T00:17:35","guid":{"rendered":"https:\/\/demo.ssl-system.com\/iee.jp\/en-ias\/academic\/labo013\/"},"modified":"2026-01-23T16:42:03","modified_gmt":"2026-01-23T07:42:03","slug":"labo013","status":"publish","type":"page","link":"https:\/\/www.iee.jp\/en-ias\/academic\/labo013\/","title":{"rendered":"University of Tsukuba, Power Electronics Laboratory"},"content":{"rendered":"<p class=\"p-info__items__data u-align-right\">2024\/10\/24<\/p>\n<div class=\"p-section__contents u-mt-medium\">\n<div class=\"c-flex c-flex--top c-flex--between\">\n<table class=\"p-table p-table-line\">\n<tbody>\n<tr>\n<th>Member<\/th>\n<td>Noriyuki Iwamuro, <br \/>Hiroshi Yano, <br \/>Takanori Isobe\n                <\/td>\n<\/tr>\n<tr>\n<th>keyword<\/th>\n<td>\n                    <a class=\"p-link\" href=\"..\/..\/power\/\">Power Electronics<\/a> \/<br \/>\n                    <a class=\"p-link\" href=\"..\/..\/semiconductor\/\">Power Semiconductor<\/a>\n                <\/td>\n<\/tr>\n<tr>\n<th>Lab&#8217;s Website<\/th>\n<td><a class=\"p-link\" href=\"http:\/\/power.bk.tsukuba.ac.jp\/\" target=\"_blank\" title=\"\tClick here\uff08new window open\uff09\" rel=\"noopener noreferrer\"> Click here\uff08new window open\uff09<\/a><\/td>\n<\/tr>\n<tr>\n<th>Representative paper1<\/th>\n<td><a class=\"p-link\" href=\"https:\/\/www.jstage.jst.go.jp\/article\/ieejias\/136\/2\/136_145\/_article\/-char\/ja\/\" target=\"_blank\" rel=\"noopener\">Dead Time Control Circuit using the Current Sensor of SiC-MOSFET<\/a><\/td>\n<\/tr>\n<tr>\n<th>Other publish<\/th>\n<td><a class=\"p-link\" href=\"https:\/\/www.jstage.jst.go.jp\/result\/global\/-char\/ja?globalSearchKey=%E5%B2%A9%E5%AE%A4%E6%86%B2%E5%B9%B8+or+%E7%9F%A2%E9%87%8E%E8%A3%95%E5%8F%B8+or+%E7%A3%AF%E9%83%A8%E9%AB%98%E7%AF%84\" target=\"_blank\" rel=\"noopener\">Click here(Japanese page)<\/a><\/td>\n<\/tr>\n<\/tbody>\n<\/table><\/div>\n<\/p><\/div>\n","protected":false},"excerpt":{"rendered":"<p>2024\/10\/24 Member Noriyuki Iwamuro, Hiroshi Yano, Takanori Isobe keyword Power Electronics \/ Power Semiconductor Lab&#8217;s Website Click here\uff08new window open\uff09 Representative paper1 Dead Time Control Circuit using the Current Sensor of SiC-MOSFET Other publish Click here(Japanese page)<\/p>\n","protected":false},"author":1,"featured_media":0,"parent":45,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false},"class_list":["post-833","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/pages\/833","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/comments?post=833"}],"version-history":[{"count":1,"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/pages\/833\/revisions"}],"predecessor-version":[{"id":834,"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/pages\/833\/revisions\/834"}],"up":[{"embeddable":true,"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/pages\/45"}],"wp:attachment":[{"href":"https:\/\/www.iee.jp\/en-ias\/wp-json\/wp\/v2\/media?parent=833"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}