SS2-1　Design consideration of a thin-film SOI power MOSFET for high temperature applications

◎Daiki Takenaka，Tomoya Takasugi，Wataru Yoshida，Satoshi Matsumoto（Kyushu Institute of Technology）

Recently, a thin-film SOI power MOSFET has been attracted because it is one of the promising candidates for power devices, which can operate high temperature. It can suppress leakage current caused by high temperature and avoid latch-up caused by leakage current. In this study, we evaluate DC characteristics, hot carrier effect, positive bias temperature instability at high temperature and reveal the following; (1) On-resistance increases with increasing temperature. (2) Leakage current increases with increasing temperature. (3) Device degradation caused by hot carrier effect decreases with increasing temperature. (4) Device degradation caused by positive bias temperature instability increases with increasing temperature.