| Impacts of various static and dynamic fluctuation sources on the nanowire transistor characteristics are studied with the ensemble Monte Carlo (EMC) and molecular dynamics (MD) hybridized simulation. It is numerically demonstrated that the random dopant fluctuation (RDF) in source and drain regions is much larger than the random telegraph noise (RTN) induced by trapped charges in gate oxide layer. Shot noise is also compared with the RTN in terms of the transported charges within a single clock cycle, and it is found to never become the dominant noise source less than 100 GHz range. |