No. 1019
Technical trends of next generation lithography
Investigating Research Committee on ultra fine lithography
This report describes the technical trends of next generation lithography. The trends were investigated by Investigating Research Committee on Ultra Fine Lithography from April in 2002 to March in 2005, and the results were woven together. Minimization of semiconductor devices is strongly expected further more. In International Technology Roadmap of Semiconductor (ITRS), half pitches of 65 nm and 45 nm are requested in 2007 and 2010, respectively. At the starting point of the surveys, various candidates of next generation lithography (NGL) were researched in parallel. However, from 2003, immersion lithography appeared as the favorite NGL candidate. Exposure in water using ArF excimer laser light was researched intensively, and it was confirmed not to have any fatal problems. Competing EB (electron-beam) lithography and EUV (extreme ultra violet) lithography were regarded as candidates for post immersion lithography. Important subjects in lithography are masks and resists. Pattern size accuracy, defects and line-edge roughness should be improved rigorously. On the other hand, imprint lithography has also been noted remarkably in a recent few years. Since ultra-fine patterns less than 100nm are printed easily only by pressing a mold on a resin, various applications are promising. Novel technology for ball semiconductors, near-field lithography and simulations are also researched.

©2005. The Institute of Electrical Engineers of Japan