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No. 1324 | |||
| Research on Next Generation Lithography Technologies | ||||
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| Investigating R&D Committee on Next Generation Lithography Technologies | ||||
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| LSI device scaling has supported the basis of rapid growth in information society. The driving force of the LSI scaling is the progress in lithography technologies. According to ITRS (International Technology Roadmap of Semiconductor) 2012, flash memory device requires minimum half pitch 14 nm patterns in 2016. So research and development in the lithography technologies become more important. Therefore, research committee on next generation lithography technologies has investigated following items in order to clarify the technological problems and to obtain a guideline by researching the next generation lithography technologies. (1) ArF immersion and EUV lithography technologies, (2) Mask technology (3) Nanoimprint technology (4) DSA technology (5) International conference report |
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©2007. The Institute of Electrical Engineers of Japan |
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